sot23 npn silicon planar medium power transistors issue 4 ? june 1996 j partmarking details bc817 ? 6dz bc818 ? 6hz bc817-16 ? 6az BC818-16 ? 6ez bc817-25 ? 6bz bc818-25 ? 6fz bc817-40 ? 6cz bc818-40 ? 6gz complementary types bc817 ? bc807 bc818 ? bc808 absolute maximum ratings. parameter symbol bc817 bc818 unit collector-base voltage v cbo 50 30 v collector-emitter voltage v ceo 45 25 v emitter-base voltage v ebo 5v peak pulse current i cm 1a continuous collector current i c 500 ma base current i b 100 ma peak base current i bm 200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector cut-off current i cbo 0.1 5 m a m a v cb =20v, i e =0 v cb =20v, i e =0, t amb =150c emitter cut-off current i ebo 10 m a v eb =5v, i c =0 collector-emitter saturation voltage v ce(sat) 700 mv i c =500ma, i b =50ma* base-emitter turn-on voltage v be(on) 1.2 v i c =500ma, v ce =1v* static forward current transfer ratio h fe 100 40 600 i c =100ma, v ce =1v* i c =500ma, v ce =1v* -16 100 250 i c =100ma, v ce =1v* -25 160 400 i c =100ma, v ce =1v* -40 250 600 i c =100ma, v ce =1v* transition frequency f t 200 mhz i c =10ma, v ce =5v f=35mhz collector-base capacitance c obo 5.0 pf i e =i e =0, v cb =10v f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% bc817 bc818 c b e sot23 3 - 10
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